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This in-line single wafer plasma etcher has the capability to etch vias and contacts with anisotropic or sloped profiles. It is for etching silicon dioxide, silicon nitrides, and polyimides. It can handle wafers from 3" - 6" (Customer to specify desired wafer size setup).

Tegal 903E Plasma Etch System Features/Specifications:

• Cassette to cassette single wafer plasma etcher system
• Microprocessor control system
• SEMI SECS II Protocol
• Data link: RS232C serial port
• Stores up to 20 recipes (Standard)
• Pick-and-place transport type.
• Gas input: Mass flow controllers (4)
• Filtration: 0.01 micron
• Heated capacitance nanometer (MKS - 127A)
• Range: 0 - 10 Torr
• Temperature Range: 20 - 35°C
• Endpoint detection: Dual channel optical emission with optical filters
• Closed-loop nitrogen ballast
• Anodized aluminum chamber
• Gas flow: Showerhead