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The FE III-'s advanced Focused Beam system uses dual wavelength technology to directly measure the sample with a small spot at multiple angles of incidence and at multiple wavelengths. This allows the system to define more variables, increasing the certainty of the results on complex multi-layer films.
Rudolph Research FE-IIID Features/Specifications:
- Inherent accuracy for easy system matching
- Dual wavelength for absolute order resolution
- High throughput wafer transport: 29 wph
- Fact, accurate flat/notch wafer aligner
- GEM/SECDS II compliant software
- 632.8nm HeNe Laser, 780nm laser diode (optional second light source)
- Spot size: 12 x 24µm test site
- de-skew: 125µm, site by site 50µm
- Pattern recognition:
- optional pattern recognition, edge or gray scale detection, manual or auto de-skew, re-teach
- Wafer handling: 3-axis robot with random access to three cassettes for 100mm, 150mm, and 200mm wafers
- Pre-aligner: virutal flat/notch finder, x, y, cnetering ±50µm, theta ±0.1°, de-skew ±5µm
- Stage accuracy: 7µm over 200mm,
- Repeatability: ±1µm
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