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Rapid thermal single wafer processor, Prealigner and controller, Two ports for processing, Two cooling chambers, One dummy chamber, Pyrometer temperature controlled, Brooks robot and controller, Wafer mapping capability, GEM PC Controled w/windows base software, Thermocouples for dailing in process, Steady State Temperature Range 400 to 1300c, Steady State Process Time Programmable: 0-600 Sec, Ramp-up Rate Programmable, Unit capable up to 8" wafer.

System basic configuration as follows: Dual OH-band quartz reactor tube, Dynamically and independently controlled upper and lower lamp banks, Dynamic and independent Lamp control (38 Zones, Step-by-Step Lamp Correction), Fast response optical pyrometer, Hot Liner (TM) Emissivity-Independent Temperature Control, OPUS(TM) - "Optimization of Uniformity Simulator" software, SAP - Self Adjusting PID Controller for automatic PID optimization, Ergonomic Frame, Pneumatic Windows, Touch Screen with TFT display, Graphical User Interface, Pre-Aligner/Centering Station, Dummy-wafer station for tube pre-conditioning, Equipe(TM) wafer handling robot, Cassette-to-cassette automatic wafer handling, Two Input and two output cassettes, Forced Air Quartz Tube Cooling, Enhanced Quartz Reactor Cooling Design, Throughput  Enhancement Kit (incl. Fast Purge(TM) and Quartz Door Aperture), Water-cooled heating chamber, Dual wafer cooling stations, IPC computer control system with 1.7 GB hard disc, Four MFC-controlled gas lines, Exhaust Flow Sensor with Interlock, Gas distribution system in quartz reactor, One quartz wafer tray for 200 mm wafers, Calibration thermocouple, Printer and Printer interface.